Selective growth and kinetic study of copper oxide nanowires from patterned thin-film multilayer structures
Authors:
- 1 October 2007
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 22 (10) , 2691-2699
Abstract
Selective growth of CuO nanowires on the etched face of Al2O3/Cu/Al2O3 thin-film multilayer patterns was achieved by ambient oxidation at 400 °C. The nanowires were observed to selectively grow only from the pattern edge with diameter limited by the thickness of Cu thin film. Transmission-electron-microscopy (TEM) characterization confirmed CuO nanowires of a monoclinic CuO growing in the [010] crystallographic direction. Nanowire growth kinetics was studied at 400 °C for different cumulative growth durations with initial growth rates of ∼1 nm/min. A base growth mechanism with kinetics limited by oxygen diffusion through defects of a scaling oxide film is consistent with observed kinetics. The oxygen diffusivity is found to be ∼10−11 cm2/s, consistent with the grain-boundary diffusion of oxygen through polycrystalline copper oxide.Keywords
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