Low temperature operation of Ge-Ag ohmic contacts to a high mobility two dimensional electron gas
Authors:
- 1 November 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (9) , 5883-5885
Abstract
Ge‐Ag ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures are demonstrated. At 4.2 K, the specific contact resistance lies in the range 2–5 Ω mm for anneals between 520 and 560 °C. The surface morphology is smooth, and the edge definition is of the order of 100 nm. Secondary ion mass spectroscopy analysis indicates that Ge diffusion is limited to within 2000 Å of the surface for a concentration of 1017 cm−3 in samples annealed at 540 °C and below.Keywords
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