The role of simultaneous substitution of Cr and Ru on the thermoelectric properties of defect manganese silicides MnSiδ (1.73<δ<1.75)
Authors:
- V. PonnambalamVPV. Ponnambalam
- Donald T. MorelliDMDonald T. Morelli
- S. BhattacharyaSBS. Bhattacharya
- Terry M. TrittTTTerry M. Tritt
- 1 December 2013
- journal article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 580, 598-603
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Modulated crystal structure of chimney-ladder higher manganese silicidesPhysical Review B, 2008
- Ab initiostudy of the band structures of different phases of higher manganese silicidesPhysical Review B, 2008
- Preparation and properties of thin polycrystalline MnSi1.73 filmsApplied Surface Science, 1996
- High-resolution electron microscopic study of manganese silicides MnSi2−xJournal of Solid State Chemistry, 1986
- Crystal growth of manganese silicide, MnSi?1.73 and semiconducting properties of Mn15Si26Journal of Materials Science, 1981
- Refinement of the crystal structure of TiSi2 and some comments on bonding in TiSi2 and related compoundsActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1977
- Semiconducting properties of nonstoichiometric manganese silicidesJournal of Materials Science, 1972
- The structure of defect manganese silicidesMaterials Research Bulletin, 1971
- Phases with Nowotny chimney-ladder structures considered as `electron' phasesActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1970
- The crystal structure of Rh17Ga22, an example of a new kind of electron compoundActa Crystallographica, 1967