Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure

Authors:

Abstract
Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.
Funding Information
  • National Natural Science Foundation of China (91833303, 61974043, 61774059, 61674057)
  • National Basic Research Program of China (2018YFB0406500, 2017YFA0303403, 2019YFB2203400)
  • Science and Technology Commission of Shanghai Municipality (18JC1412400, 18YF1407200, 18YF1407000, 19511120100)
  • Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

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