Thermoelectric properties of Tl‐doped Bi2Se3 single crystals
- 20 April 2009
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 44 (5) , 505-510
Abstract
The single crystals of the ternary system based on Bi2‐xTlxSe3 (nominaly x = 0.0‐0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ⊥c , Hall coefficient RH (B∥c), and Seebeck coefficient S (ΔT ⊥c). The measurements indicate that by incorporating Tl in Bi2Se3 one lowers the concentration of free electrons and enhances their mobility. This effect is explained in terms of the point defects in the crystal lattice – formation of substitutional defects thallium on the site of bismuth TlBi and the decrease of concentration of selenium vacancies VSe+2. We also discuss the temperature dependence of the power factor σS2 of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to the parental Bi2Se3.Keywords
This publication has 12 references indexed in Scilit:
- Thermoelectric properties of thallium antimony tellurideJournal of Alloys and Compounds, 2004
- High Performance Thermoelectricwith an Extremely Low Thermal ConductivityPhysical Review Letters, 2001
- Conduction-band structure of mixed crystals by Shubnikov–de Haas and cyclotron resonance measurements in high magnetic fieldsPhysical Review B, 1999
- Transport Coefficients of (Bi1‐xSbx)2Se3 Single CrystalsCrystal Research and Technology, 1996
- Optical and Electrical Investigations of n‐Type Bi2Se3 Single CrystalsPhysica Status Solidi (b), 1992
- Preparation and some physical properties of Bi2−xInxSe3 single crystalsJournal of Materials Science, 1990
- Optical properties of Bi2–xInxSe3 single crystalsPhysica Status Solidi (a), 1989
- Point defects in Ga‐doped Bi2Se3 single crystalsPhysica Status Solidi (b), 1983
- Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenidesActa Crystallographica Section A, 1976
- Determination de la composition a fusion congruente de semiconducteurs binaires par analyse thermique differentielleJournal of Physics and Chemistry of Solids, 1959