Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition
Authors:
- Seigo AndoSASeigo Ando
- Naoki KobayashiNKNaoki Kobayashi
- Hiroaki AndoHAHiroaki Ando
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9B) , L1293
Abstract
A GaAs hexagonal prism structure with (110) sidewall facets perpendicular to the (111)B substrate surface is obtained by selective area metalorganic chemical vapor deposition using a SiO2 mask. These (110) sidewall facets are extremely smooth like a cleaved surface, so they can be used as the cavities of a semiconductor laser. A novel hexagonal-facet (HF) GaAs/AlGaAs double heterojunction laser structure is proposed and preliminary lasing characteristics are presented. The average threshold of the optical pumping energy for the HF-laser array is approximately 18 pJ for 416 nm excitation. Single-mode (inscribed hexagonal mode) lasing at 875 nm is obtained at room temperature.Keywords
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