Activation Energy of Electromigration in Copper Thin Film Conductor Lines
Authors:
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 427
Abstract
Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.Keywords
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