Formation of p-n Junctions in Semiconductors by the Variation of Crystal Growth Parameters
Author:
- 1 July 1956
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (7) , 746-751
Abstract
The fluid transport theory of Burton et al. for the variation of the effective distribution coefficient with growth rate and stirring is applied to the growth of semiconductor crystals from a melt containing both donor and acceptor impurities. ``Rate growing,'' or the formation of p‐n junctions by varying the growth rate, is considered and the importance of the ratio of melt concentrations is demonstrated. Junction formation by varying the degree of stirring in the melt, or ``stirring modulation'' is also described. General principles are derived and various applications are discussed.Keywords
This publication has 8 references indexed in Scilit:
- Rate-Grown Germanium Crystals for High-Frequency TransistorsJournal of Applied Physics, 1955
- Silicon n-p-n Grown Junction TransistorsJournal of Applied Physics, 1955
- Distribution of Solute in Crystals Grown from the Melt. Part II. ExperimentalThe Journal of Chemical Physics, 1953
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953
- Segregation of Impurities During the Growth of Germanium and SiliconThe Journal of Physical Chemistry, 1953
- The Surface Tension of Liquid Silicon and GermaniumPhysical Review B, 1953
- Junctions Produced by Growth Rate VariationPhysical Review B, 1952
- Growth of Germanium Single Crystals ContainingJunctionsPhysical Review B, 1951