AlN/GaN insulated gate HEMTs with HfO 2 gate dielectric
Authors:
- 9 April 2009
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 45 (8) , 423-424
Abstract
AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 µm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 µA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, were measured to be 9 and 32 GHz, respectively.Keywords
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