Theory of the field-effect mobility in amorphous organic transistors
- 15 May 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (20) , 12964-12967
Abstract
The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, with respect to both the gate voltage and the temperature dependence of the mobility.Keywords
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