Junctionless Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate

This publication has 11 references indexed in Scilit:

• High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
  Applied Physics Express, 2010
• Nanowire transistors without junctions
  Nature Nanotechnology, 2010
• GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current
  IEEE Electron Device Letters, 2010
• Germanium on insulator and new 3D architectures opportunities for integration
  International Journal of Nanotechnology, 2010
• High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
  IEEE Electron Device Letters, 2008
• High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
  IEEE Electron Device Letters, 2008
• Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices
  Materials Science in Semiconductor Processing, 2006
• Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
  Applied Physics Letters, 2005
• Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
  Applied Physics Letters, 2003
• On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
  IEEE Transactions on Electron Devices, 1994