Remote Hydrogen Microwave Plasma Chemical Vapor Deposition of Amorphous Silicon Carbonitride (a‐SiCN) Coatings Derived From Tris(dimethylamino)Silane
- 12 April 2011
- journal article
- research article
- Published by Wiley in Plasma Processes and Polymers
- Vol. 8 (6) , 542-556
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- Hard and High-Temperature-Resistant Silicon Carbonitride Coatings Based on N-Silyl-Substituted Cyclodisilazane RingsJournal of the Electrochemical Society, 2008
- Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materialsThin Solid Films, 2008
- Investigations on hardness of rf sputter deposited SiCN thin filmsMaterials Science and Engineering: A, 2004
- A comparative study of plasma enhanced chemically vapor deposited SiOH and SiNCH films using the environmentally benign precursor diethylsilaneMaterials Letters, 2002
- Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVDThin Solid Films, 2000
- Thermogravimetric analysis/mass spectrometry investigation of the thermal conversion of organosilicon precursors into ceramics under argon and ammonia. 2. Poly(silazanes)Chemistry of Materials, 1992
- Effect of UV irradiation of the film during plasma chemical vapour depositionThin Solid Films, 1992
- An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experimentsJournal of Materials Research, 1992
- Silicon carbonitride from polymeric precursors: thermal cross-linking and pyrolysis of oligosilazane model compoundsChemistry of Materials, 1992
- Preceramic polymer pyrolysisJournal of Materials Science, 1989