Properties of amorphous silicon produced by ion implantation: Thermal annealing
Authors:
- W.G. SpitzerWSW.G. Spitzer
- G.K. HublerGHG.K. Hubler
- T.A. KennedyTKT.A. Kennedy
- 1 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 309-312
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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