Characterisation and Diagnosis of Silicon Wafers and Devices
Authors:
- Andrés CuevasACAndrés Cuevas
- Ronald A. SintonRSRonald A. Sinton
- 1 January 2003
- book chapter
- Published by Elsevier
- p. 227-252
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictionsJournal of Applied Physics, 2002
- Analysis of photoexcited charge carrier density profiles in Si wafers by using an infrared cameraApplied Physics Letters, 2002
- Measurement of differential and actual recombination parameters on crystalline silicon wafers [solar cells]IEEE Transactions on Electron Devices, 1999
- Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance dataApplied Physics Letters, 1996
- High-resolution lifetime mapping using modulated free-carrier absorptionJournal of Applied Physics, 1995
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurementsJournal of Applied Physics, 1986
- Contactless measurement of semiconductor conductivity by radio frequency-free-carrier power absorptionReview of Scientific Instruments, 1976
- Measurement of Lifetime of Carriers in Semiconductors through Microwave ReflectionJournal of Applied Physics, 1962
- Lifetime Measurements of Excess Carriers in SemiconductorsJournal of Applied Physics, 1956
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955