3D GaN nanoarchitecture for field-effect transistors
Authors:
- Muhammad Fahlesa FatahilahMFMuhammad Fahlesa Fatahilah
- Klaas StrempelKSKlaas Strempel
- Feng YuFYFeng Yu
- Sindhuri VodapallySVSindhuri Vodapally
- Andreas WaagAWAndreas Waag
- Hutomo Suryo WasistoHWHutomo Suryo Wasisto
Open Access
- 1 May 2019
- journal article
- research article
- Published by Elsevier in Micro and Nano Engineering
- Vol. 3, 59-81
Abstract
No abstract availableKeywords
Funding Information
- Lower Saxony Ministry for Science and Culture (MWK) Landesmittel des Niedersächsischen Vorab
- German Research Foundation
- Indonesian-German Center for Nano and Quantum Technologies (IG-Nano)
- Ministry of Research, Technology and Higher Education of the Republic of Indonesia (RISTEKDIKTI)
This publication has 119 references indexed in Scilit:
- Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistorsNature, 2011
- Surface-induced effects in GaN nanowiresJournal of Materials Research, 2011
- A practical route towards fabricating GaN nanowire arraysCrystEngComm, 2011
- Physical origin of the incubation time of self-induced GaN nanowiresApplied Physics Letters, 2011
- Threading defect elimination in GaN nanowiresJournal of Materials Research, 2011
- Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxyNanotechnology, 2009
- Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arraysJournal of Crystal Growth, 2009
- Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islandsNanotechnology, 2007
- Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistorsNanotechnology, 2006
- Electrostatic Surface Charge at Aqueous/α-Al2O3Single-Crystal Interfaces as Probed by Optical Second-Harmonic GenerationThe Journal of Physical Chemistry B, 2005