InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess
- 9 October 2009
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (11) , 1131-1133
Abstract
We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800degC in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed no apparent lag effects, indicating a high-quality native oxide. This was confirmed by monitoring the radio-frequency load lines in the time domain. The MOSHEMT yielded a power density of 6 W/mm at a drain voltage as low as 20 V and at 4 GHz, a power added efficiency of 32% and an ft and f max of 61 and 112 GHz, respectively, illustrating the capability of such MOSHEMT to operate at high frequencies.Keywords
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