Blue emission band in compensated GaN:Mg codoped with Si
Authors:
- 30 July 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (4) , 045205
Abstract
Codoping of p-type GaN with Mg and Si was investigated to determine its effect on deep level luminescence. By codoping with Si, the absolute intensity of the 2.8-eV blue luminescence band, previously tentatively attributed to deep donor-acceptor-pair (DAP) emission, decreased by more than an order of magnitude. The observed decrease is attributed to the reduction of the concentration of deep donor nitrogen vacancy complexes. The dependence of the emission peak position on hole concentration was investigated. A blueshift was observed with increasing carrier concentration. The shift of the blue band with carrier concentration and excitation intensity is explained semiquantitatively by a potential fluctuation model indicating its importance in DAP recombination.Keywords
This publication has 31 references indexed in Scilit:
- Hole conductivity and compensation in epitaxial GaN:Mg layersPhysical Review B, 2000
- Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related MaterialsMaterials Science Forum, 2000
- Overcoming doping bottlenecks in semiconductors and wide-gap materialsPhysica B: Condensed Matter, 1999
- The study on the growth and properties of Mg doped and Mg–Si codoped p-type GaNSolid-State Electronics, 1999
- Origin of defect-related photoluminescence bands in doped and nominally undoped GaNPhysical Review B, 1999
- Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping MethodJapanese Journal of Applied Physics, 1997
- Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1996
- Mechanisms of band-edge emission in Mg-doped p-type GaNApplied Physics Letters, 1996
- Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing RadiationJapanese Journal of Applied Physics, 1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989