Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates
- 1 July 2005
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 281 (1) , 38-46
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxyJournal of Crystal Growth, 2003
- Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaNJournal of Crystal Growth, 2002
- Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopyMaterials Science and Engineering: B, 2001
- Recent advances in defect-selective etching of GaNJournal of Crystal Growth, 2000
- Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowthJournal of Crystal Growth, 1998