Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

This publication has 14 references indexed in Scilit:

• On the lack of observable light-induced H diffusion near room temperature
  Journal of Non-Crystalline Solids, 1996
• The Role of the Light Exposure on the Defect Formation of a-Si:H
  Solid State Phenomena, 1995
• Light-induced changes of the non-Gaussian 1/f noise statistics in doped hydrogenated amorphous silicon
  Philosophical Magazine Part B, 1994
• Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity
  Philosophical Magazine Part B, 1994
• Optical-bias effects in electron-drift measurements and defect relaxation ina-Si:H
  Physical Review B, 1993
• Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics
  Physical Review Letters, 1993
• Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
  Physical Review Letters, 1992
• Light-enhanced hydrogen motion ina-Si:H
  Physical Review Letters, 1991
• THERMAL EQUILIBRIUM EFFECTS IN DOPED HYDROGENATED AMORPHOUS SILICON
  1989
• Reversible conductivity changes in discharge-produced amorphous Si
  Applied Physics Letters, 1977