Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
Authors:
- 1 June 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 07431562,p. 195-196
Abstract
Atom probe tomography (APT) in conjunction with scanning spreading resistance microscopy (SSRM) is demonstrated for the first time to profile dopant and carrier distributions in FinFET-based devices with sub-nanometer resolution. These two techniques together provide information on the degree of conformality, the dose retention and the dopant activation. These results are also compared with a methodology involving secondary ion mass spectrometry (SIMS). Ion implantation for increased conformality of source/drain extensions is demonstrated for tilted implants, which clearly leads to improved device performance.Keywords
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