High-performance GaAs polarized electron source for use in inverse photoemission spectroscopy
Authors:
- 1 September 1988
- journal article
- conference paper
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 59 (9) , 1933-1940
Abstract
The design and operating properties of a GaAs polarized electron source are presented. An electron optical system is described that passes more than 80% of the emitted electrons at 10 μA to the target under low-energy (7–20 eV) parallel beam conditions. Laser excitation can give rise to abnormal energy distributions of the photoemitted electron beam. The existence of longitudinal modes gives a possible explanation for this behavior, which can be avoided using a mode stabilized light source. The overall performance of the polarized electron source is demonstrated by inverse photoemission spectra from Ni(110).Keywords
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