A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure
Authors:
- 3 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (1) , 286-292
Abstract
A one-transistor one-capacitor (1T1C) SBT-based embedded nonvolatile FeRAM, which operates at a low voltage of 0.9 V even after 10 years of imprint degradation, was fabricated using a 0.18-/spl mu/m process. The low voltage operation and high reliability characteristics have been achieved using a novel reference voltage scheme and a multilayer shielded bit-line structure.Keywords
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