A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (I)

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Abstract
The structure of Ge films evaporated by several methods onto room temperature substrates of NaCl and films which have been ion implanted with 3 × 1015, 30 to 40 ke V Ge74 has been investigated via a scanning electron diffraction instrument with electron energy filtering. The radial distribution functions of all films are very similar and exhibit strong correlation peaks at 2.45, 4.00, and (4.85 ± 0.075) Å with coordinations of 4, 12, and ≈ 7, respectively. The remaining major peaks for higher r deviate substantially from the diamond cubic form of Ge. From the RDF analysis a density ratio ϱ0/ϱcryst of 0.86 to 0.95 is determined. Thermal anneal experiments showed that the films may be annealed to a density of ≈0.97 of crystalline density without crystallization. Amorphous films which have been ion implanted with the same energy and dose as the polycrystalline films show a considerable concentration of pores and voids of a maximum diameter of 100 Å. The RDF, however, is identical to the as‐deposited film with the exception of some changes in the correlation for r greater than 11 Å.

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