Simple model for threshold voltage in a short-channel IGFET
Authors:
- A.G. FortinoAFA.G. Fortino
- 1 October 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (10) , 1266-1268
Abstract
The threshold voltage of a short-channel IGFET can be expressed, in relation to that for a long-channel device, asV_{T} = V_{TLC} - \alpha - \betaV_{DS}. This behavior is deduced from a charge injection model and is verified both by two-dimensional numerical simulations and by actual threshold data.Keywords
This publication has 2 references indexed in Scilit:
- Ion-implanted threshold tailoring for insulated gate field-effect transistorsIEEE Transactions on Electron Devices, 1977
- Subthreshold characteristics of insulated-gate field-effect transistorsIEEE Transactions on Circuit Theory, 1973