Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts
Authors:
- Dong-Seok LeemDLDong-Seok Leem
- Joon Seop KwakJKJoon Seop Kwak
- Y. ParkYPY. Park
- S.W. ChaeSCS.W. Chae
- Tae-Yeon SeongTSTae-Yeon Seong
- 24 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 17 (2) , 291-293
Abstract
We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400/spl deg/C-600/spl deg/C for 1 min in air, yielding specific contact resistances of /spl sim/10/sup -4/ /spl Omega//spl middot/cm/sup 2/. In addition, the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.Keywords
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