Model reduction for optimization of rapid thermal chemical vapor deposition systems
Authors:
- A. TheodoropoulouATA. Theodoropoulou
- R.A. AdomaitisRAR.A. Adomaitis
- E. ZafiriouEZE. Zafiriou
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 11 (1) , 85-98
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Rapid Thermal Processing: Status, Problems and Options After the First 25 YearsMRS Proceedings, 1993
- Mathematical Modeling of a Single‐Wafer Rapid Thermal ReactorJournal of the Electrochemical Society, 1992
- Temperature uniformity in RTP furnacesIEEE Transactions on Electron Devices, 1992
- Low-dimensional models for complex geometry flows: Application to grooved channels and circular cylindersPhysics of Fluids A: Fluid Dynamics, 1991
- A model for rapid thermal processing: achieving uniformity through lamp controlIEEE Transactions on Semiconductor Manufacturing, 1991
- Modelling of wafer heating during rapid thermal processingApplied Physics A, 1990
- Thermal and stress analysis of semiconductor wafers in a rapid thermal processing ovenIEEE Transactions on Semiconductor Manufacturing, 1988
- Analysis of Multicomponent LPCVD Processes: Deposition of Pure and In Situ Doped Poly‐SiJournal of the Electrochemical Society, 1985
- ORTHOGONAL COLLOCATION IN CHEMICAL REACTION ENGINEERINGCatalysis Reviews, 1974
- Solution of boundary-value problems by orthogonal collocationChemical Engineering Science, 1967