A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes
Authors:
- Jhong-Ren HuangJHJhong-Ren Huang
- Ting-Wei ChenTCTing-Wei Chen
- Jian-Wei LeeJLJian-Wei Lee
- Chih-Fang HuangCHChih-Fang Huang
- Lu-Sheng HongLHLu-Sheng Hong
- 1 March 2022
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 310
Abstract
No abstract availableKeywords
Funding Information
- National Tsing Hua University
- Ministry of Science and Technology, Taiwan (MOST108-2218-E-011-019)
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