Dielectric enhancement of BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer thin films prepared by RF magnetron sputtering
Authors:
- Zunping XuZXZunping Xu
- Dongxu YanDYDongxu Yan
- Dingquan XiaoDXDingquan Xiao
- Ping YuPYPing Yu
- Jianguo ZhuJZJianguo Zhu
- 1 March 2013
- journal article
- Published by Elsevier in Ceramics International
- Vol. 39 (2) , 1639-1643
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China
This publication has 14 references indexed in Scilit:
- Dielectric enhancement of BaTiO3/BaSrTiO3/SrTiO3 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol–gel methodMaterials Letters, 2011
- Low dielectric dissipation and enhanced tunability of Ba0.6Sr0.4TiO3 thin films by the modified composition and multilayer structureJournal of Electroceramics, 2007
- High-tunability and low-microwave-loss Ba0.6Sr0.4TiO3 thin films grown on high-resistivity Si substrates using TiO2 buffer layersApplied Physics Letters, 2005
- Novel barium strontium titanate Ba0.5Sr0.5TiO3/MgO thin film composites for tunable microwave devicesMaterials Letters, 2003
- Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 filmsApplied Physics Letters, 2002
- Preparation of BaxSr1−xTiO3 thin films with seeding layer by a sol–gel methodJournal of Crystal Growth, 2002
- Alternative dielectrics to silicon dioxide for memory and logic devicesNature, 2000
- Realization of high tunability barium strontium titanate thin films by rf magnetron sputteringApplied Physics Letters, 1999
- Accommodation of nonstoichiometry in (100) fiber-textured (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor depositionApplied Physics Letters, 1999
- Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access memory applicationApplied Physics Letters, 1995