The electronic structure of β-Ga2O3
- 22 November 2010
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (21) , 211903
Abstract
has the widest energy gap of the transparent conducting oxides. The interest in its electronic properties has recently increased because of its applications in various optoelectronic devices, semiconductor lasers, and ultrasensitive gas detecting systems. In contrast, information on the electronic structure of is very scarce. Here, we present the experimental valence-band structure of single crystals determined by high-resolution angle-resolved photoelectron spectroscopy utilizing synchrotron radiation. We find good matching of the experimental band structure with the advanced density functional theory calculations employing hybrid functionals and projector augmented wave potentials.
Keywords
This publication has 8 references indexed in Scilit:
- Czochralski growth and characterization of β‐Ga2O3 single crystalsCrystal Research and Technology, 2010
- Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)Applied Physics Letters, 2009
- Electronic and thermodynamic properties of β-Ga2O3Applied Physics Letters, 2006
- Hybrid functionals based on a screened Coulomb potentialThe Journal of Chemical Physics, 2003
- Deep-ultraviolet transparent conductive β-Ga2O3 thin filmsApplied Physics Letters, 2000
- Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis setPhysical Review B, 1996
- Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis setComputational Materials Science, 1996
- A Reinvestigation of β-Gallium OxideActa Crystallographica Section C Crystal Structure Communications, 1996