Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

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Abstract
Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.
Funding Information
  • State Key Research & Development Programs (No.2016YFB0401504 and 2016YFF0203603)
  • National Key Basic Research and Development Program of China (No.2015CB655004)
  • MOST, Guangdong Natural Science Foundation (No. 2016A030313459)
  • Science and technology project of Guangdong Province (No.2014B090915004 and 2016B090907001)
  • the Fundamental Research Funds for the Central Universities (No.2015ZP024 and 2015ZZ063)
  • State Key Laboratory of Luminescence and Applications (SKLA-2016-11)

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