Process- and geometry-scalable bipolar transistor and transmission line models for Si and SiGe MMICs in the 5-22 GHz range
Authors:
- S.P. VoinigescuSVS.P. Voinigescu
- D. MarchesanDMD. Marchesan
- J.L. ShowellJSJ.L. Showell
- M.C. MaliepaardMMM.C. Maliepaard
- M. CudnochMCM. Cudnoch
- M.G.M. SchumacherMSM.G.M. Schumacher
- M. HerodMHM. Herod
- D.J. WalkeyDWD.J. Walkey
- G.E. BabcockGBG.E. Babcock
- P. SchvanPSP. Schvan
- R.A. HadawayRHR.A. Hadaway
- 28 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 307-310
Abstract
No abstract availableKeywords
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