Measurements of dose with individual FAMOS transistors
Authors:
- L.Z. ScheickLSL.Z. Scheick
- P.J. McNultyPMP.J. McNulty
- D.R. RothDRD.R. Roth
- M.G. DavisMDM.G. Davis
- B.E. MasonBMB.E. Mason
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1751-1756
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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