Ultrashallow profiling of semiconductors by secondary ion mass spectrometry:
Authors:
- E. NapolitaniENE. Napolitani
- F. PrioloFPF. Priolo
- 1 February 2001
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 4 (1-3) , 55-60
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the sourceApplied Physics Letters, 2000
- Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrumentJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
- Microscopical aspects of boron diffusion in ultralow energy implanted siliconApplied Physics Letters, 1999
- Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealingApplied Physics Letters, 1999
- Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline siliconMaterials Science in Semiconductor Processing, 1999
- The surface transient in Si for SIMS with oblique low-energy O2+ beamsSurface and Interface Analysis, 1999
- Physical mechanisms of transient enhanced dopant diffusion in ion-implanted siliconJournal of Applied Physics, 1997
- Secondary ion mass spectroscopy resolution with ultra-low beam energiesJournal of Vacuum Science & Technology A, 1996
- Ultra shallow doping profiling with SIMSReports on Progress in Physics, 1995