Temperature–Time Texture Transition of Pb(Zr 1− x Ti x )O 3 Thin Films: I, Role of Pb‐rich Intermediate Phases
Authors:
- 1 September 1994
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 77 (9) , 2332-2336
Abstract
Lead‐rich intermediate phases, in particular Pt 5–7 Pb and PbO, are found to form on Pt(111) atop Ti–buffered Si substrates prior to formation of Pb(Zr 1− x Ti x )O 3 (PZT) thin films. Pt 5–7 Pb is a [111] textured transient intermetallic phase that nucleates PZT[111] texture. PbO is a [001] textured layer compound that nucleates PZT[100] texture. The formation conditions and lattice matching of these intermediate phases have been examined. The presence of other possible intermediate phases, such as pyrochlore and Zr and Ti‐rich phases, has also been investigated but found unrelated to the texture selection of perovskite PZT.Keywords
This publication has 10 references indexed in Scilit:
- Temperature–Time Texture Transition of Pb(Zr1−xTix)O3 Thin Films: II, Heat Treatment and Compositional EffectsJournal of the American Ceramic Society, 1994
- Phase transformations of oriented Pb(Zr1-xTix)O3thin films from metallo-organic precursorsFerroelectrics, 1994
- The orientation of (Pb,La)TiO3 thin films grown on different substrates by multi-ion-beam reactive cosputtering techniqueFerroelectrics, 1993
- Preferred Orientations for Sol-Gel Derived Plzt Thin LayersMRS Proceedings, 1993
- Processing and electrical properties of Pb (ZrxTi1−x)O3 (x=0.2–0.75) films: Comparison of metallo-organic decomposition and sol-gel processesJournal of Applied Physics, 1992
- Preparation and Electrical Properties of Lanthanum‐Doped Lead Titanate Thin Films by Sol–Gel ProcessingJournal of the American Ceramic Society, 1991
- Topics in electronic ceramicsIEEE Transactions on Electrical Insulation, 1990
- Ferroelectric materials for 64 Mb and 256 Mb DRAMsIEEE Circuits and Devices Magazine, 1990
- Preparation of Pb(Mg1/3Nb2/3)O3 Thin Film by Sol-Gel MethodJapanese Journal of Applied Physics, 1989
- Preparation and properties of PLZT films from metallo-organic precursorsFerroelectrics, 1989