Mobile fluoride ions in SiO2

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Abstract
We have obtained evidence that fluoride ions are mobile in SiO2 at room temperature. The outer surface of a thin layer of the oxide is coated with a fluoride salt and charged by a negative corona discharge in air. From shifts in the C−V curve and changes in the properties of trapping states near the interface we infer that negative ions have moved through the oxide. This is confirmed by an analysis with a secondary−ion mass spectrometer.

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