Hydrogen Diffusion and Solubility in Silicon Carbide
Authors:
- 1 May 1978
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 61 (5-6) , 221-225
Abstract
Tritium diffusion coefficients and deuterium solubilities were measured for silicon carbide. At 500° to 1300° C, measured tritium diffusion coefficients were much lower than the recorded values for metals, whereas the activation energies for diffusion were much higher (30 to 75 kcal/mol). The solubility of deuterium in silicon carbide decreased as temperature increased and exhibited a pressure dependence of ∼ P 1l2 .Keywords
This publication has 10 references indexed in Scilit:
- Tritium Diffusion in A1 2 O 3 and BeOJournal of the American Ceramic Society, 1977
- Abstract: Tritium diffusion in ceramic materials for thermonuclear reactorsJournal of Vacuum Science and Technology, 1976
- Chemical Diffusion in Polycrystalline Al 2 O 3 as Determined from Electrical Conductivity MeasurementsJournal of the American Ceramic Society, 1974
- Diffusion and Permeation of Hydrogen Isotopes in Fusion Reactors: a Survey1972
- Defect Diffusion in Single Crystal Aluminum OxideJournal of the American Ceramic Society, 1969
- Hydrogen Etching of Silicon CarbideJapanese Journal of Applied Physics, 1969
- Thermodynamic properties in the systems vanadium-hydrogen, niobium-hydrogen, and tantalum-hydrogenThe Journal of Physical Chemistry, 1969
- The determination of rare gas diffusion following recoil labelling of plane or spherical solidsNuclear Instruments and Methods, 1967
- Self-diffusion in beryllium oxideJournal of Nuclear Materials, 1964
- The diffusivity of hydrogen in nickelActa Metallurgica, 1955