Study on nucleation and propagation of median cracks generated by scratching single crystal silicon
Authors:
- Longxu YaoLYLongxu Yao
- Lei ZhangLZLei Zhang
- Peiqi GePGPeiqi Ge
- Yufei GaoYGYufei Gao
- Hui WangHWHui Wang
- 1 January 2020
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 105
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (51475276)
This publication has 25 references indexed in Scilit:
- Crystallographic effect on subsurface damage formation in silicon microcuttingCIRP Annals, 2012
- Polarized Raman spectroscopy clarifies the effect of crystal anisotropy on elastic stress fields developed on the surface of silicon single‐crystalPhysica Status Solidi (a), 2011
- Analytical model to determine the critical feed per edge for ductile–brittle transition in milling process of brittle materialsInternational Journal of Machine Tools and Manufacture, 2011
- ElAM: A computer program for the analysis and representation of anisotropic elastic propertiesComputer Physics Communications, 2010
- A quantitative analysis for the stress field around an elastoplastic indentation/contactJournal of Materials Research, 2009
- An analytical expression for the stress field around an elastoplastic indentation/contactActa Materialia, 2007
- Ideal strength of silicon: Anab initiostudyPhysical Review B, 2006
- Grinding induced subsurface cracks in silicon wafersInternational Journal of Machine Tools and Manufacture, 1999
- Plastically deformed region around indentations on Si single crystalJournal of Applied Physics, 1994
- Displacement field of a point force acting on the surface of an elastically anisotropic half-spaceJournal of Physics A: General Physics, 1994