Enhancement of piezoelectric properties of lithium niobate thin films by different annealing parameters
Authors:
- Roman N. ZhukovRZRoman N. Zhukov
- K.S. KushnerevKKK.S. Kushnerev
- Dmitry A. KiselevDmitry A. Kiselev
- Tatiana S. IlinaTITatiana S. Ilina
- Ilya V. KubasovIlya V. Kubasov
- Alexander M. KislyukAKAlexander M. Kislyuk
- Mikhail D. MalinkovichMMMikhail D. Malinkovich
- Yuri N. ParkhomenkoYPYuri N. Parkhomenko
Open Access
- 30 June 2020
- journal article
- research article
- Published by Pensoft Publishers in Modern Electronic Materials
- Vol. 6 (2) , 47-52
Abstract
Piezoelectric materials with useful properties find a wide range of applications including opto- and acousto- electronics. Lithium niobate in the form of a thin film is one of those promising materials and has a potential to improve ferroelectric random access memories devices, optical waveguides or acoustic delay lines by virtue of its physical characteristics, e.g. electro-optic coefficient, acoustic velocity, refractive indices etc. The key challenge to overcome is lithium nonstoichiometry as it leads to the appearance of parasite phases and thus aggravates physical and structural properties of a film. According to literature data, in order to obtain microcrystalline piezoelectric phase in previously amorphous films a set of methods is used. In our case we tried to synthesize LN films using congruent target and non-heated silicon substrate and then attain the piezoelectric phase by different annealing parameters. Afterwards LN films were compared to the ones synthesized on the silicon substrate with an additional buffer layer of platinum. Samples were studied by scanning probe microscope. Self-polarization vectors were defined. Based on domain structure images, the histograms of distribution of piezoresponse signals were built.Keywords
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