Thermodynamical Analysis for Vapor Growth of GaxIn1-xAs Crystals
Authors:
- 1 October 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (10) , 1337
Abstract
The open tube vapor growth process of GaxIn1-xAs crystal in the Ga-In-Cl-H-As system is analyzed by a chemical equilibrium model, and the relation between growth condition and crystal composition is discussed. The theoretical analysis explained experimental results qualitatively.Keywords
This publication has 5 references indexed in Scilit:
- Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-SbJournal of Physics and Chemistry of Solids, 1969
- Preparation of Epitaxial Ga[sub x]In[sub 1−x]AsJournal of the Electrochemical Society, 1967
- Thermal and Electrical Transport in InAs-GaAs AlloysJournal of Applied Physics, 1966
- The Preparation and Properties of GaAs-InAs Mixed CrystalsJournal of the Electrochemical Society, 1965
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964