High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C

Authors:
  • BCBilly L. Crowder
    Billy L. Crowder
  • JFJohn M. Fairfield
    John M. Fairfield
Publisher website
Google Scholar
Abstract
No abstract available