Transformation of the Crystalline Structure of an ALD TiO[sub 2] Film on a Ru Electrode by O[sub 3] Pretreatment
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 9 (1) , F5-F7
Abstract
The influence of the thin surface layer, formed by oxidation of a Ru electrode using ( for ), on the phase formation and dielectric properties of thin films grown by atomic layer deposition (ALD) is investigated. films grown on the as-received Ru electrode (no pretreatment) have an anatase structure and the dielectric constant is . However, the crystalline structure of the film grown on an pretreated Ru electrode is rutile, and the dielectric constant is . This is attributed to a structural compatibility between rutile and .Keywords
This publication has 9 references indexed in Scilit:
- Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor ApplicationsJournal of the Electrochemical Society, 2005
- High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer depositionApplied Physics Letters, 2004
- The surface science of titanium dioxideSurface Science Reports, 2003
- Atomic layer deposition of TiO2 thin films from TiI4 and H2OApplied Surface Science, 2002
- Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition processJournal of Crystal Growth, 2001
- Influence of structure development on atomic layer deposition of TiO2 thin filmsApplied Surface Science, 2001
- Atomic Layer Chemical Vapor Deposition of TiO[sub 2] Low Temperature Epitaxy of Rutile and AnataseJournal of the Electrochemical Society, 2000
- Control of thin film structure by reactant pressure in atomic layer deposition of TiO2Journal of Crystal Growth, 1996
- Growth of titanium dioxide thin films by atomic layer epitaxyThin Solid Films, 1993