Impact Ionisation and Quantum Efficiency in InSb
Author:
- 1 May 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 111 (1) , 141-153
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Recombination in Semiconductors by a Light Hole Auger TransitionPhysica Status Solidi (b), 1967
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962
- Electron impact ionization in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957