Creation of excitons and defects in a CsI crystal during pulsed electron irradiation
Authors:
- 1 April 1998
- journal article
- Published by Pleiades Publishing Ltd in Physics of the Solid State
- Vol. 40 (4) , 586-590
Abstract
Data presented on the influence of the temperature in the range 80–650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed eKeywords
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