A SiC-MOSFET Bidirectional Switch Solution for Direct Matrix Converter Topologies
Authors:
- Hernán LezcanoHLHernán Lezcano
- Rodrigo RomeroRRRodrigo Romero
- Sergio NuñezSNSergio Nuñez
- Bruno SanabriaBruno Sanabria
- Fabian Palacios-PereiraFabian Palacios-Pereira
- Edgar MaquedaEdgar Maqueda
- Sergio ToledoSergio Toledo
- Julio PacherJPJulio Pacher
- David CaballeroDavid Caballero
- Raúl GregorRaúl Gregor
- Marco RiveraMarco Rivera
Open Access
Abstract
Bidirectional switches are highly required power electronics units for the design of power converters, especially for direct matrix converters. This article presents the design and implementation of a compact bidirectional switch based on SiC-MOSFET technology, aimed at high-efficiency, high-density power electronics applications. The proposed architecture employs surface-mount components, optimizing both the occupied area and electrical performance. The selected switching device is the IMBG120R053M2H from Infineon, a SiC-MOSFET known for its low on-resistance, high reverse-voltage blocking capability, and excellent switching speed. To drive the power devices, the UCC21521 gate driver integrates two independent isolated outputs in a single package, enabling precise control and reduced electromagnetic interference (EMI). The developed design supports bidirectional current conduction and voltage blocking, offering a robust and scalable solution for next-generation power converters. Design criteria, simulation results, and experimental validations are discussed.Keywords
Funding Information
- Consejo Nacional de Ciencia y Tecnología, Paraguay (PINV01-743)
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