Very low-loss high frequency lateral-mode resonators on polished ultrananocrystalline diamond
Authors:
- 1 May 2011
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 23271914,p. 1-5
Abstract
For the first time, high frequency (~900MHz) lateral-mode thin-film piezoelectric-on-diamond resonators are reported with insertion loss values as low as 2.6dB when terminated by 50Ω impedance. In this work, the surface of the as-deposited ultrananocrystalline diamond (UNCD) is polished to promote the direct growth of highly oriented c-plane AlN which is critical in enhancing the electromechanical coupling and therefore reducing the motional impedance of the resonator. The frequency of resonators fabricated on 3-4um UNCD with a 930GPa Young's modulus is measured to be about 2× higher than similar devices fabricated on 5um of silicon. These resonators exhibit a low temperature coefficient of frequency (TCF) of -9.6 ppm/°C and have a great potential for being utilized in channel-select high frequency filters.Keywords
This publication has 7 references indexed in Scilit:
- Toward ultimate performance in GHZ MEMS resonators: Low impedance and high Q2010
- Q-enhancement through minimization of acoustic energy radiation in micromachined lateral-mode resonators2009
- AlN contour-mode resonators for narrow-band filters above 3 GHz2009
- Are Diamonds a MEMS' Best Friend?IEEE Microwave Magazine, 2007
- ZNO-on-nanocrystalline diamond lateral bulk acoustic resonators2007
- Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS ResonatorsJournal of Microelectromechanical Systems, 2006
- High frequency micromechanical piezo-on-silicon block resonators2004