A Dual-Output 550 GHz frequency tripler featuring ultra-compact silicon micromachining packaging and enhanced power-handling capabilities
Authors:
- 1 September 2015
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 845-848
Abstract
We report on an ultra-compact 550 GHz Schottky diode based frequency tripler based on an on-chip power combined structure that allows to integrate and combine four multiplying structures onto a single chip to increase up to a factor of four the power handling capabilities of traditional frequency multipliers. The chip is mounted onto a Silicon micromachined stack to increase compactness. The design features to very well balance independent outputs that can be used to feed multi-pixel receivers with no additional power dividing. The tripler is designed to operate in the 520-600 GHz band, showing a measured peak power of 1.6-1.8 mW per output when pumped with 200 mW. This corresponds to an efficiency of around 4% in the device once the output power is corrected for the text fixture losses and other unexpected losses.Keywords
This publication has 5 references indexed in Scilit:
- Technology, Capabilities, and Performance of Low Power Terahertz SourcesIEEE Transactions on Terahertz Science and Technology, 2011
- Silicon micromachining technology for THz applications2010
- Deep Reactive Ion Etching based silicon micromachined components at terahertz frequencies for space applications2008
- In-Phase Power-Combined Frequency Triplers at 300 GHzIEEE Microwave and Wireless Components Letters, 2008
- A 540-640-GHz high-efficiency four-anode frequency triplerIEEE Transactions on Microwave Theory and Techniques, 2005