Er-doped InP and GaAs grown by metalorganic chemical vapor deposition
Authors:
- 28 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (13) , 1010-1012
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Yb-doped InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
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- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986
- Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaPJournal of Applied Physics, 1986
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983