The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs
- 1 June 2017
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. T198-T199
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Hole Mobility Enhancement in Compressively Strained ${\rm Ge}_{0.93}{\rm Sn}_{0.07}$ pMOSFETsIEEE Electron Device Letters, 2013
- Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ PassivationIEEE Electron Device Letters, 2013