Charge separation in coupled InAs quantum dots and strain-induced quantum dots
Authors:
- 6 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (15) , 2194-2196
Abstract
We present an InAs self-assembled quantum dot structure designed to spatially separate and store photo-generated electron-hole pairs. The structure consists of pairs of strain-coupled quantum dots. Separation of electron-hole pairs into the quantum dots and strain-induced quantum dots has been observed using power-dependant photoluminescence and bias-dependent photoluminescence.Keywords
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