InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
Authors:
- 1 March 1995
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 188 (1) , 249-258
Abstract
Nanometer‐scale quantum dots are fabricated using the Stranski‐Krastanov growth mode of InAs on GaAs (001). For an average coverage of four monolayers, 1011cm−2 pyramidal‐shaped dots (12 ± 1 nm base along 〈100〉, 5 ± 1 nm high) are formed as observed in plane‐view and cross‐section transmission electron microscopy. The quantum dots exhibit short‐range order, aligning along rows in 〉100〉 directions. The three‐dimensional confinement of the wave function results in ultrasharp luminescence lines (full width at half maximum < 0.15 meV) from individual dots as revealed with highly spatially resolved cathodoluminescence. Even at elevated temperatures extremely sharp lines are observed, proving the δ‐like zero‐dimensional electronic density of states.Keywords
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